200 W GaAs-based MODFET power amplifier for W-CDMA base stations

Author

Ishida, H. ; Yokoyama, T. ; Furukawa, H. ; Tanaka, T. ; Maeda, M. ; Morimoto, S. ; Ota, Y. ; Ueda, D. ; Hamaguchi, C.

Author_Institution

Semicond. Device Res. Center, Matsushita Electron. Corp., Osaka, Japan

fYear

1999

Firstpage

393

Lastpage

396

Abstract

We have developed a novel GaAs-based MODFET with the breakdown voltage (BVdg) of 130 V keeping the maximum drain current (I/sub max/) over 300 mA/mm where double-recessed and offset gate structures are provided. This newly developed MODFET attained the output power of 200 W at a supplying voltage of 15 V and a quiescent drain current of 10 A, which is the highest output power exhibited by using GaAs based FET´s ever reported.

Keywords

III-V semiconductors; UHF field effect transistors; UHF power amplifiers; cellular radio; code division multiple access; gallium arsenide; power HEMT; radio equipment; semiconductor device breakdown; 10 A; 15 V; 2.2 GHz; 200 W; 48.7 percent; GaAs; GaAs-based MODFET power amplifier; UHF HEMT; W-CDMA base stations; breakdown voltage; double-recessed gate structures; offset gate structures; wideband CDMA; Base stations; Doping; Frequency; Gallium arsenide; HEMTs; MODFETs; Multiaccess communication; Power amplifiers; Power generation; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824177

Filename

824177