Title :
200 W GaAs-based MODFET power amplifier for W-CDMA base stations
Author :
Ishida, H. ; Yokoyama, T. ; Furukawa, H. ; Tanaka, T. ; Maeda, M. ; Morimoto, S. ; Ota, Y. ; Ueda, D. ; Hamaguchi, C.
Author_Institution :
Semicond. Device Res. Center, Matsushita Electron. Corp., Osaka, Japan
Abstract :
We have developed a novel GaAs-based MODFET with the breakdown voltage (BVdg) of 130 V keeping the maximum drain current (I/sub max/) over 300 mA/mm where double-recessed and offset gate structures are provided. This newly developed MODFET attained the output power of 200 W at a supplying voltage of 15 V and a quiescent drain current of 10 A, which is the highest output power exhibited by using GaAs based FET´s ever reported.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; cellular radio; code division multiple access; gallium arsenide; power HEMT; radio equipment; semiconductor device breakdown; 10 A; 15 V; 2.2 GHz; 200 W; 48.7 percent; GaAs; GaAs-based MODFET power amplifier; UHF HEMT; W-CDMA base stations; breakdown voltage; double-recessed gate structures; offset gate structures; wideband CDMA; Base stations; Doping; Frequency; Gallium arsenide; HEMTs; MODFETs; Multiaccess communication; Power amplifiers; Power generation; Semiconductor optical amplifiers;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824177
