DocumentCode :
1643380
Title :
Low energy plasma chemical reactor with coaxial magnetic field for precision etching of elements with submicron size
Author :
Pavlenko, V.N. ; Ustalov, V.V. ; Fedorovich, O.A.
Author_Institution :
Inst. for Nucl. Res., Kiev, Ukraine
fYear :
1998
Firstpage :
253
Abstract :
Summary form only given, as follows. We have created a plasma chemical reactor with the operating axial-symmetric magnetic field. We have the possibility of checking in main working regime the energy of ions from 20 eV to 200 eV. The absence in a chemical active plasma of ions with energy >200 eV allows etching of different materials and thin films of micron and submicron sizes without defects.
Keywords :
magnetic fields; plasma applications; plasma devices; sputter etching; axial-symmetric magnetic field; chemical active plasma; coaxial magnetic field; elements; ion energy; low energy plasma chemical reactor; precision etching; submicron size; thin films; Atomic layer deposition; Chemical elements; Chemical reactors; Coaxial components; Etching; Ion beams; Lithium; Magnetic fields; Plasma applications; Plasma chemistry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
Conference_Location :
Raleigh, NC, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-4792-7
Type :
conf
DOI :
10.1109/PLASMA.1998.677812
Filename :
677812
Link To Document :
بازگشت