• DocumentCode
    1643380
  • Title

    Low energy plasma chemical reactor with coaxial magnetic field for precision etching of elements with submicron size

  • Author

    Pavlenko, V.N. ; Ustalov, V.V. ; Fedorovich, O.A.

  • Author_Institution
    Inst. for Nucl. Res., Kiev, Ukraine
  • fYear
    1998
  • Firstpage
    253
  • Abstract
    Summary form only given, as follows. We have created a plasma chemical reactor with the operating axial-symmetric magnetic field. We have the possibility of checking in main working regime the energy of ions from 20 eV to 200 eV. The absence in a chemical active plasma of ions with energy >200 eV allows etching of different materials and thin films of micron and submicron sizes without defects.
  • Keywords
    magnetic fields; plasma applications; plasma devices; sputter etching; axial-symmetric magnetic field; chemical active plasma; coaxial magnetic field; elements; ion energy; low energy plasma chemical reactor; precision etching; submicron size; thin films; Atomic layer deposition; Chemical elements; Chemical reactors; Coaxial components; Etching; Ion beams; Lithium; Magnetic fields; Plasma applications; Plasma chemistry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
  • Conference_Location
    Raleigh, NC, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-4792-7
  • Type

    conf

  • DOI
    10.1109/PLASMA.1998.677812
  • Filename
    677812