Gate oxides in 50 nm devices: thickness uniformity improves projected reliability

Author

Weir, B.E. ; Silverman, P.J. ; Alam, M.A. ; Baumann, F. ; Monroe, D. ; Ghetti, A. ; Bude, J.D. ; Timp, G.L. ; Hamad, A. ; Oberdick, T.M. ; Zhao, N.X. ; Ma, Y. ; Brown, M.M. ; Hwang, D. ; Sorsch, T.W. ; Madic, J.

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1999

Firstpage

437

Lastpage

440

Abstract

We demonstrate that reliability projections can be improved significantly if oxide thickness uniformity is improved. Our results include a Weibull slope of 1.38 for an extremely uniform 1.6 nm oxide, and also a steeper voltage scaling factor than has been used in the past. Transistors with 50 nm gate-length and /spl sim/1.5 nm oxides exhibit soft breakdown, suggesting that it may be possible to relax current reliability specifications.

Keywords

MOSFET; Weibull distribution; semiconductor device breakdown; semiconductor device reliability; 50 nm; MOS transistor; Weibull slope; gate oxide; reliability; soft breakdown; thickness uniformity; voltage scaling factor; Capacitors; Current density; Dielectric devices; Electric breakdown; Maximum likelihood estimation; Semiconductor device modeling; Semiconductor device reliability; Silicon compounds; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824187

Filename

824187