DocumentCode
1643603
Title
Nonlinear characteristics of Weibull breakdown distributions and its impact on reliability projection for ultra-thin oxides
Author
Wu, E.Y. ; Nowak, E. ; Han, L.K. ; Dufresne, D. ; Abadeer, W.W.
Author_Institution
IBM Microelectron. Div., Essex Junction, VT, USA
fYear
1999
Firstpage
441
Lastpage
444
Abstract
We report nonlinear characteristics of Weibull time-to-breakdown distributions and non-Poisson area scaling behavior observed on ultra thin oxides. We develop a numerical model to quantitatively account for these effects in the context of current modulation due to oxide thickness variations. It is found that without proper treatment of current modulation effect, the use of Weibull slopes at higher failure percentiles can lead to erroneous and pessimistic reliability projection.
Keywords
MOSFET; Weibull distribution; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; MOSFET; Weibull time-to-breakdown distribution; current modulation; nonPoisson area scaling; nonlinear characteristics; numerical model; reliability; ultrathin oxide; Design for quality; Electric breakdown; Lead compounds; MOS capacitors; MOSFETs; Microelectronics; Nitrogen; Research and development; Shape measurement; Statistical distributions;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5410-9
Type
conf
DOI
10.1109/IEDM.1999.824188
Filename
824188
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