• DocumentCode
    1643603
  • Title

    Nonlinear characteristics of Weibull breakdown distributions and its impact on reliability projection for ultra-thin oxides

  • Author

    Wu, E.Y. ; Nowak, E. ; Han, L.K. ; Dufresne, D. ; Abadeer, W.W.

  • Author_Institution
    IBM Microelectron. Div., Essex Junction, VT, USA
  • fYear
    1999
  • Firstpage
    441
  • Lastpage
    444
  • Abstract
    We report nonlinear characteristics of Weibull time-to-breakdown distributions and non-Poisson area scaling behavior observed on ultra thin oxides. We develop a numerical model to quantitatively account for these effects in the context of current modulation due to oxide thickness variations. It is found that without proper treatment of current modulation effect, the use of Weibull slopes at higher failure percentiles can lead to erroneous and pessimistic reliability projection.
  • Keywords
    MOSFET; Weibull distribution; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; MOSFET; Weibull time-to-breakdown distribution; current modulation; nonPoisson area scaling; nonlinear characteristics; numerical model; reliability; ultrathin oxide; Design for quality; Electric breakdown; Lead compounds; MOS capacitors; MOSFETs; Microelectronics; Nitrogen; Research and development; Shape measurement; Statistical distributions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.824188
  • Filename
    824188