Minority carrier tunneling and stress-induced leakage current for p/sup +/ gate MOS capacitors with poly-Si and poly-Si/sub 0.7/Ge/sub 0.3/ gate material

Author

Houtsma, V.E. ; Holleman, J. ; Salm, C. ; de Hann, I.R. ; Schmitz, J. ; Widdershoven, F.P. ; Woerlee, P.H.

Author_Institution

MESA Res. Inst., Twente Univ., Enschede, Netherlands

fYear

1999

Firstpage

457

Lastpage

460

Abstract

In this paper the I-V conduction mechanism for gate injection (-V/sub g/), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (t/sub bd/) of PMOS capacitors with p/sup +/-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling (MCT) from the gate is proposed for the I-V and SILC characteristics at -V/sub g/ of our devices. Time-to-breakdown data are presented and discussed.

Keywords

MOS capacitors; dielectric thin films; leakage currents; minority carriers; semiconductor device breakdown; semiconductor device models; tunnelling; 3.1 to 5.6 nm; I-V conduction mechanism; PMOS capacitors; SILC characteristics; Si; Si/sub 0.7/Ge/sub 0.3/; gate injection; minority carrier tunneling; model; oxide thickness; p/sup +/ gate MOS capacitors; p/sup +/-poly-Si gate material; poly-Si/sub 0.7/Ge/sub 0.3/ gate material; poly-SiGe gate material; polysilicon gate material; stress-induced leakage current; time-to-breakdown data; Conducting materials; Degradation; Diodes; Electric breakdown; Electrons; Laboratories; Leakage current; MOS capacitors; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824192

Filename

824192