Title :
A 140-GHz single-chip transceiver in a SiGe technology
Author :
Jahn, Martin ; Aufinger, Klaus ; Stelzer, Andreas
Author_Institution :
Christian Doppler Lab. for Integrated Radar Sensors, Johannes Kepler Univ. Linz, Linz, Austria
Abstract :
This paper presents a 140-GHz monolithically integrated transceiver (TRX) fabricated in a SiGe HBT process with an fmax of 340 GHz. The TRX includes a fundamental-wave voltage-controlled oscillator (VCO) and a divide-by-32 prescaler. The VCO sweeps from 136 to 150GHz and achieves a single-sideband phase noise of -82 to -87 dBc/Hz. The medium power amplifier in the transmitter provides 4dBm saturated output power, and the receiver achieves a peak gain of 19.5 dB, a 13.5 dB minimum double-sideband noise figure, and a 1-dB compression point of -23 dBm. The TRX consumes 724mW from 1.8 and 3.3V supplies. Board-level radar measurements with frequency sweeps from 142 to 144GHz proved the functionality.
Keywords :
Ge-Si alloys; monolithic integrated circuits; phase noise; power amplifiers; transceivers; voltage-controlled oscillators; SiGe technology; board-level radar measurements; divide-by-32 prescaler; frequency 140 GHz; frequency 340 GHz; frequency sweeps; fundamental-wave voltage-controlled oscillator; medium power amplifier; power 724 mW; single-chip transceiver; single-sideband phase noise; voltage 1.8 V; voltage 3.3 V; Gain; Noise measurement; Power generation; Radio frequency; Silicon germanium; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2