Title :
An investigation of electro-thermal instabilities in 150 GHz SiGe HBTs fabricated on SOI
Author :
Chakraborty, Partha S. ; Horst, Stephen J. ; Moen, Kurt A. ; Bellini, Marco ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We investigate, for the first time, the electro-thermal stability of 150 GHz SiGe HBTs that were optimized for bulk-Si and then fabricated on SOI substrates to enable a direct comparison. AC, DC and pulsed measurements are used to characterize the devices and study the onset of electro-thermal instabilities. Implications of electro-thermal feedback induced instabilities resulting from self-heating are discussed, along with consequent electrical biasing constraints imposed on the device. Figures-of-merit are proposed as effective tools for comparing devices with strong self-heating effects. TCAD is used to predict the implications for performance scaling and BiCMOS technology development for SiGe on SOI platforms.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; silicon-on-insulator; thermal stability; AC measurement; BiCMOS technology development; DC measurement; HBT; SOI substrates; SiGe-Si; TCAD; electrical biasing constraints; electro-thermal feedback induced instabilities; electro-thermal stability; frequency 150 GHz; heterojunction bipolar transistor; performance scaling; pulsed measurement; self-heating effects; BiCMOS integrated circuits; Current measurement; Force measurement; Performance evaluation; Silicon germanium; Temperature measurement; BiCMOS; Electro-thermal effects; Heterojunction bipolar transistors; Silicon-germanium; Silicon-on-insulator (SOI); Stability criteria;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667897
