Title :
Cryogenic operation of InAs/AlSb HEMT hybrid LNAs
Author :
Moschetti, Giuseppe ; Wadefalk, N. ; Nilsson, Per-Ake ; Abbasi, Mohammadjavad ; Desplanque, Ludovic ; Wallart, Xavier ; Grahn, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci. - MC2, Chalmers Univ. of Technol., Göteborg, Sweden
Abstract :
The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.
Keywords :
HEMT circuits; cryogenic electronics; low noise amplifiers; low-power electronics; HEMT; LNA; cryogenic operation; frequency 4 GHz to 8 GHz; noise figure 0.27 dB; power 0.6 mW; ultra low-power applications; Cryogenics; Gain; HEMTs; Impact ionization; Noise; Power demand; Hybrid; InAs/AlSb; LNA; high electron mobility transistor (HEMT); low noise; ultra-low power;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
