Title :
Differential variable-gain LNA for UWB system
Author :
Woojin Chang ; Sangheung Lee ; Jaekyoung Mun ; Eunsoo Nam
Author_Institution :
RF Convergence Component Res. Team, Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
This paper introduces an 1~12 GHz differential 2-stage variable-gain low-noise amplifier (VGLNA) using 0.25 μm SiGe:C BiCMOS commercial process technology for ultra-wideband (UWB) system. The results of the fabricated monolithic microwave integrated circuit (MMIC) amplifier show 18 dB gain with a 3 dB frequency band of 1.3~11.9 GHz and noise figure of less than 5 dB under the bias condition of 2.5 V supply voltage and 55 mW total dc power consumption. The gain-control range (GCR) is from -17 dB to +18 dB. The chip size of the manufactured VGLNA is 0.99 mm2 including all testing pads for RF and dc probes.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; carbon; differential amplifiers; field effect MMIC; low noise amplifiers; ultra wideband technology; BiCMOS commercial process; GCR; SiGe:C; VGLNA; differential 2-stage variable-gain low noise amplifier; frequency 1 GHz to 12 GHz; gain 18 dB; gain control range; monolithic microwave integrated circuit amplifier; power 55 mW; size 0.25 mum; ultra wideband system; voltage 2.5 V; Gain; MMICs; Radio frequency; Silicon germanium; Voltage control; Voltage measurement; Wideband; BiCMOS; MMIC; SiGe; UWB; VGLNA;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
