• DocumentCode
    1644022
  • Title

    A new substrate engineering for the formation of empty space in silicon (ESS) induced by silicon surface migration

  • Author

    Sato, T. ; Aoki, N. ; Mizushima, I. ; Tsunashima, Y.

  • Author_Institution
    Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
  • fYear
    1999
  • Firstpage
    517
  • Lastpage
    520
  • Abstract
    A new technique to form empty spaces in silicon substrates is presented. The empty space with various shapes, such as plate as well as sphere and pipe, could be formed under the surface of the silicon substrate.
  • Keywords
    elemental semiconductors; silicon; substrates; Si; empty space in silicon; silicon substrate; silicon surface migration; substrate engineering; Air gaps; Annealing; Electronic switching systems; Laboratories; Lattices; MOS devices; Microelectronics; Shape; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.824206
  • Filename
    824206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1644022