• DocumentCode
    1644052
  • Title

    Issues in modeling small devices

  • Author

    Laux, S.E. ; Fischetti, M.V.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1999
  • Firstpage
    523
  • Lastpage
    526
  • Abstract
    What issues remain unanticipated in modeling ultrasmall devices? We attempt to offer a few, possibly new, ideas to the existing and prevailing thoughts on this subject. We focus on only three areas: quantum mechanics, self-consistency and Coulomb effects, all from a Si MOSFET perspective.
  • Keywords
    MOSFET; elemental semiconductors; semiconductor device models; silicon; Coulomb effects; Si; Si MOSFET; quantum mechanics; self-consistency; ultrasmall device model; Acoustic scattering; Boltzmann equation; Capacitive sensors; Electron mobility; MOSFET circuits; Monte Carlo methods; Phonons; Physics computing; Silicon; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.824207
  • Filename
    824207