DocumentCode
1644177
Title
Three-phase 200 kVA UPS with IGBT consisting of high power factor converter and instantaneous waveform controlled HF PWM inverter
Author
Yatsu, Makoto ; Kuroki, Kazuo ; Katoh, Mikio ; Fujikura, Masanobu
fYear
1990
Firstpage
1057
Abstract
A description is given of a three-phase 200 kVA UPS (uninterruptible power supply). In this UPS, both the input converter section and the output inverter section utilize an IGBT (insulated gate bipolar transistor) as a main semiconductor switching device. Compared with the conventional type of UPS using bipolar junction transistors, this UPS provides an equivalent efficiency in spite of having an approximately 10 times higher switching frequency. As a result, the new UPS is of a compact, lightweight, low-acoustic noise, and high performance design, resulting in reduced input harmonic current (less than 5% THD) and also a reduced output voltage distortion (less than 8% THD) under a nonlinear load
Keywords
insulated gate bipolar transistors; invertors; power convertors; power transistors; pulse width modulation; switching; uninterruptible power supplies; 200 kVA; HF PWM inverter; IGBT; UPS; efficiency; harmonic; insulated gate bipolar transistor; performance; power convertors; power factor; power transistors; switching; three-phase; uninterruptible power supply; voltage distortion; Insulated gate bipolar transistors; Inverters; Noise reduction; Power semiconductor switches; Reactive power; Semiconductor device noise; Switching converters; Switching frequency; Uninterruptible power systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 1990. IECON '90., 16th Annual Conference of IEEE
Conference_Location
Pacific Grove, CA
Print_ISBN
0-87942-600-4
Type
conf
DOI
10.1109/IECON.1990.149283
Filename
149283
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