Title :
Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs
Author :
d´Alessandro, V. ; Marano, I. ; Russo, S. ; Céli, D. ; Chantre, A. ; Chevalier, P. ; Pourchon, F. ; Rinaldi, N.
Author_Institution :
Dept. of Biomed., Electron., & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy
Abstract :
Calibrated 3-D numerical simulations supported by DC experimental data are employed to quantify the impact of the key layout and technology parameters on the thermal resistance of state-of-the-art SiGe heterojunction bipolar transistors (HBTs) so as to define proper optimization criteria. The geometry parameters of a simple scalable model are optimized to describe the thermal resistance dependence upon emitter dimensions for the HBTs under analysis.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; integrated circuit layout; thermal resistance; DC experimental data; SiGe:C; calibrated 3D numerical simulation; emitter dimension; geometry parameter; heterojunction bipolar transistor; layout impact; optimization criteria; technology parameter; thermal resistance; Finite element methods; Heating; Silicon; Silicon germanium; Thermal analysis; Thermal resistance; Numerical simulations; SiGe HBTs; self-heating; thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667912
