Performance limits of silicon MOSFET´s

A procedure for comparing the current vs. voltage characteristics of MOSFETs against their upper limits is described, and a 0.35 /spl mu/m n-MOS technology is assessed. Channel back-scattering coefficients for this technology are deduced where we show that the on-current performance is /spl sim/45% of its upper limit. We also show that conventional device scaling maintains approximately the same level of device performance, and we discuss the implications for the ITRS on-current performance targets. Finally, we compare the upper limit performance of a p-channel vs. an n-channel MOSFET technology.