Title :
Effect of technology on the input transistor selection criteria of a low noise preamplifier
Author :
Noulis, T. ; Siskos, S. ; Sarrabayrouse, G.
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Greece
Abstract :
An analysis of a preamplifier noise behaviour, of a low-energy X-rays strip detector for space applications, is presented. The ratio of equivalent thermal noise (encth) to enc1f/ is defined as the noise comparison ratio (NCR) and is used as the preamplifier input transistor selection criterion. The effect of low-noise preamplifier CMOS technology on noise minimization is thoroughly examined. The preamplifier was designed in AMS 0.6μm process, with NMOS and PMOS input MOSFET, and in DMILL 0.8μm, with NMOS input MOSFET. Analysis is supported by simulation results, which confirm that the selection of the preamplifier input transistor, for a given shaper, is depended on the noise parameters of the used technology.
Keywords :
CMOS integrated circuits; MOSFET; field effect transistors; preamplifiers; radiation detection; semiconductor device noise; 0.6 micron; 0.8 micron; AMS; CMOS technology; DMILL; MOSFET; NMOS; PMOS; equivalent thermal noise ratio; input transistor selection criteria; low noise preamplifier; low-energy X-rays strip detector; low-noise preamplifier; noise comparison ratio; noise minimization; noise parameters; preamplifier noise behaviour; space applications; CMOS technology; MOS devices; MOSFET circuits; Noise shaping; Preamplifiers; Signal to noise ratio; Space technology; Strips; X-ray detection; X-ray detectors;
Conference_Titel :
Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean
Print_ISBN :
0-7803-8271-4
DOI :
10.1109/MELCON.2004.1346769
