12 ps implanted base silicon bipolar technology

Author

Bock, J. ; Knapp, H. ; Aufinger, K. ; Wurzer, M. ; Boguth, S. ; Schreiter, R. ; Meister, T.F. ; Rest, M. ; Ohnemus, M. ; Treitinger, L.

Author_Institution

Infineon Technol., Munich, Germany

fYear

1999

Firstpage

553

Lastpage

556

Abstract

A production-near implanted base silicon bipolar technology for mixed analogue and digital applications has been developed. The applicability for mobile communications up to at least 6 GHz and for high-speed data links in the range of 10-40 Gbit/s is proven by f/sub max/ of 65 GHz, state of the art minimum noise figures of 1.3 dB at 6 GHz, 12 ps ECL gate delay, low power consumption, and a record 52 GHz dynamic frequency divider.

Keywords

UHF integrated circuits; bipolar MMIC; delays; elemental semiconductors; integrated circuit noise; low-power electronics; mixed analogue-digital integrated circuits; mobile radio; silicon; 10 to 40 Gbit/s; 12 ps; 52 GHz; 6 GHz; 65 GHz; ECL gate delay; Si; dynamic frequency divider; high-speed data links; implanted base bipolar technology; minimum noise figures; mixed analogue and digital applications; mobile communications; power consumption; Circuits; Delay; Doping profiles; Fabrication; Germanium silicon alloys; Isolation technology; Mobile communication; Noise figure; Production; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824214

Filename

824214