Title :
High transconductance on AlGaN/GaN HEMT on (110) silicon substrate
Author :
Gerbedoen, J. ; Soltani, Ali ; De Jaeger, J.-C. ; Yvon, C.
Author_Institution :
IEMN (Inst. d´Electron., de Microelectron. et de Nanotechnol.), Villeneuve-d´Ascq, France
Abstract :
AlGaN/GaN HEMT was grown on (110)-oriented silicon substrate. These new transistors are fabricated with unrecessed T-shaped 45nm gate length, to simplify the process and are based on a three layer resist. The technology is similar to those used for devices on Si (111) substrate. A transconductance as high as 455mS/mm and a maximum drain-source current saturation of 1.36A.mm-1 at VGS=0V are obtained. Current gain transition frequency and maximum frequency oscillation of 63GHz and 106GHz respectively are also measured. These results are very promising for this new line of components.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; resists; semiconductor growth; silicon; wide band gap semiconductors; AlGaN-GaN; HEMT; Si; current gain transition frequency; frequency 106 GHz; frequency 63 GHz; high transconductance; maximum frequency oscillation; silicon substrate; size 45 nm; three layer resist; unrecessed T-shaped gate length; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Passivation; Silicon; Substrates; (110) Silicon; HEMT GaN; High transconductance; RF performance; T-gate;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
