Title :
Subthreshold behaviour modelling of FGMOS transistors using the ACM and the BSIM3V3 models
Author :
Drakaki, M. ; Fikos, G. ; Siskos, S.
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Greece
Abstract :
The modelling behaviour of FGMOS devices in the subthreshold region is investigated. Experimental and simulated ID-VGG, and gm/ID vs. log(ID) data for the standard CMOS 0.6 μm process are compared. The BSIM3V3 and the advanced compact model, ACM are adopted to model the behaviour of the FGMOS transistors in the subthreshold region. Two different DC simulation macromodels are used for the DC simulation of the floating gate devices. The performance of the two MOSFET models and of the two DC simulation macromodels in modelling the FGMOS transistors in the subthreshold region is discussed.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit modelling; semiconductor device models; 0.6 micron; ACM models; BSIM3V3 models; CMOS process; DC simulation macromodels; FGMOS transistors; MOSFET models; advanced compact model; floating gate devices; subthreshold behaviour modelling; subthreshold region; Analog circuits; Character generation; Coupling circuits; Equations; MOSFET circuits; Nonvolatile memory; Physics; Semiconductor device modeling; Transistors; Voltage control;
Conference_Titel :
Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean
Print_ISBN :
0-7803-8271-4
DOI :
10.1109/MELCON.2004.1346770
