Subthreshold behaviour modelling of FGMOS transistors using the ACM and the BSIM3V3 models

Author

Drakaki, M. ; Fikos, G. ; Siskos, S.

Author_Institution

Dept. of Phys., Aristotle Univ. of Thessaloniki, Greece

Volume

1

fYear

2004

Firstpage

55

Abstract

The modelling behaviour of FGMOS devices in the subthreshold region is investigated. Experimental and simulated ID-VGG, and gm/ID vs. log(ID) data for the standard CMOS 0.6 μm process are compared. The BSIM3V3 and the advanced compact model, ACM are adopted to model the behaviour of the FGMOS transistors in the subthreshold region. Two different DC simulation macromodels are used for the DC simulation of the floating gate devices. The performance of the two MOSFET models and of the two DC simulation macromodels in modelling the FGMOS transistors in the subthreshold region is discussed.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit modelling; semiconductor device models; 0.6 micron; ACM models; BSIM3V3 models; CMOS process; DC simulation macromodels; FGMOS transistors; MOSFET models; advanced compact model; floating gate devices; subthreshold behaviour modelling; subthreshold region; Analog circuits; Character generation; Coupling circuits; Equations; MOSFET circuits; Nonvolatile memory; Physics; Semiconductor device modeling; Transistors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean

Print_ISBN

0-7803-8271-4

Type

conf

DOI

10.1109/MELCON.2004.1346770

Filename

1346770