DocumentCode
1644284
Title
Hybrid and monolithic GaN power transistors for high power S-Band Radar applications
Author
Wood, S.M. ; Andre, U. ; Millon, B.J. ; Milligan, J.
Author_Institution
RF & Power Devices, Cree, Inc., Research Triangle Park, NC, USA
fYear
2012
Firstpage
421
Lastpage
424
Abstract
This paper presents the design, development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; phased array radar; power transistors; wide band gap semiconductors; GaN; MMIC power amplifiers; S-band radar; hybrid power transistors; monolithic power transistors; phased array radar; power 240 W; power 75 W; Gallium nitride; Performance evaluation; Power amplifiers; Power generation; Radar; Topology; Transistors; GaN; HEMT; MMIC; Power Amplifier; Radar;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location
Amsterdam
Print_ISBN
978-1-4673-2302-4
Electronic_ISBN
978-2-87487-026-2
Type
conf
Filename
6483826
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