Title :
Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process
Author :
King, C.A. ; Frei, M.R. ; Mastrapasqua, M. ; Ng, K.K. ; Kim, Y.O. ; Johnson, R.W. ; Moinian, S. ; Martin, S. ; Cong, H.-I. ; Klemens, F.P. ; Tang, Ronglin ; Nguyen, Donald ; Hsu, T.-I. ; Campbell, T. ; Molloy, S.J. ; Fritzinger, L.B. ; Ivanov, T.G. ; Bour
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
We report a new super self-aligned graded SiGe base transistor that uses high energy implantation, rather than epitaxial growth, to form the sub-collector region. This new inexpensive process yields a device with f/sub T/ of 52 GHz and f/sub max/ of 70 GHz with the addition of only 4 lithography levels over our 0.25 /spl mu/m CMOS technology without any changes to the existing process steps. Also, we demonstrate 4:1 multiplexer and 1:4 demultiplexer circuits using this technology that show excellent performance at 10 Gbit/s.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar transistors; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit technology; ion implantation; millimetre wave bipolar transistors; semiconductor materials; 10 Gbit/s; 52 GHz; 70 GHz; HBT; SiGe; demultiplexer circuit; graded SiGe base bipolar transistors; high energy implantation; high performance modular BiCMOS process; low cost bipolar transistors; multiplexer circuit; sub-collector region formation; super self-aligned structure; Bipolar transistors; CMOS process; CMOS technology; Circuits; Costs; Epitaxial growth; Germanium silicon alloys; Lithography; Multiplexing; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824217
