Title :
A 0.18 /spl mu/m 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications
Author :
Freeman, G. ; Ahlgren, D. ; Greenberg, D.R. ; Groves, R. ; Huang, F. ; Hugo, G. ; Jagannathan, B. ; Jeng, S.J. ; Johnson, J. ; Schonenberg, K. ; Stein, K. ; Volant, R. ; Subbanna, S.
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
We present a self-aligned, 0.18 /spl mu/m emitter width SiGe HBT with f/sub T/ of 90 GHz, f/sub MAX/ of 90 GHz (both at V/sub CB/=0.5 V), NF/sub MIN/ of 0.4 dB, and BV/sub CEO/ of 2.7 V. We also demonstrate that this device is integrable with IBM´s 0.18 /spl mu/m, 1.8/3.3 V copper metallization CMOS technology with little effect on the CMOS device properties and design rules.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF integrated circuits; application specific integrated circuits; heterojunction bipolar transistors; integrated circuit interconnections; semiconductor materials; 0.18 micron; 0.4 dB; 1.8 V; 14 V; 3.3 V; 5.5 V; 90 GHz; ASIC-compatible technology; Cu; Cu interconnect technology; Cu metallization CMOS technology; RF applications; SiGe; SiGe HBT BiCMOS; microwave applications; self-aligned technology; BiCMOS integrated circuits; Character generation; Copper; Delay; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Noise figure; Silicon germanium; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824218
