Title :
Wet Chemical MESA Etching Using HCl-based and FeCl3 Light Sensitive Etchants for InP Gunn Diodes
Author :
Lee, Seong-Dae ; Lee, Jae-Seo ; Kwak, No-Sung ; Kim, Mi-Ra ; Kim, Sam-Dong ; Rhee, Jin-Koo
Author_Institution :
Millimeter-wave INnovation Technol. Res. Center (MINT), Dongguk Univ., Seoul
Abstract :
We have fabricated InP Gunn diodes with two different wet chemical etchants for MESA etching and compared the results. In order to make a comparative study, we have used two wet chemical etchants; one was HCl-based etchant (HCl : H3PO4 : H2O = 3:1:2), the other one was FeCl3 light sensitive etchant. It was shown that the fabricated diodes have the currents of 201 and 250 mA, and the breakdown voltage of below 8 V and over 11 V, respectively.
Keywords :
Gunn diodes; III-V semiconductors; electric breakdown; etching; indium compounds; iron compounds; FeCl3; Gunn diodes; H2O; H3PO4; HCl; InP; MESA etching; breakdown voltage; light sensitive etchants; wet chemical etchants; Cathodes; Chemical technology; Diodes; Frequency; Gold; Gunn devices; Indium phosphide; Millimeter wave radar; Millimeter wave technology; Wet etching;
Conference_Titel :
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1885-5
Electronic_ISBN :
978-1-4244-1886-2
DOI :
10.1109/GSMM.2008.4534545
