SiGe profile design tradeoffs for RF circuit applications

We present the first experimental results for new SiGe profile designs which were developed explicitly for improving minimum noise figure (NF/sub min/) without sacrificing gain, linearity, frequency response, or the stability of the SiGe strained layer. A measured NF/sub min/ of 0.2 dB at 2.0 GHz with an associated gain (G/sub assoc/) of 13 dB at noise matching, and a linearity efficiency (OIP3/P/sub DC/) of 10 were obtained for the best low-noise profile, all of which represent substantial improvements in RF performance over the Si BJT and control SiGe HBT design point, and were accomplished without sacrificing SiGe film stability. The fundamental SiGe profile design tradeoffs associated with emerging SiGe RF circuit applications are discussed.