Title :
Millimeter-wave beamforming circuits in SiGe BiCMOS
Author :
Elkhouly, Mohamed ; Choi, Chang-Soon ; Glisic, Srdjan ; Scheytt, Christoph ; Ellinger, Frank
Author_Institution :
IHP Microelectron., Frankfurt (Oder), Germany
Abstract :
Integrated millimeter-wave 2 bit and 3 bit phase shifters and 4 channel beamforming network are presented in this paper. The 2 bit phase shifter exhibits 4° RMS phase error and a RMS gain error <;1 dB. In the 55-67 GHz range, the 3 bit phase shifter shows RMS phase error <;7° and a RMS gain error <;1 dB. The 4 channel beamforming network consists of four 2 bit RF phase shifter and a fully differential passive power distribution network. Between the 4 channels, the beamforming network exhibits less than 4° and 0.6 dB RMS phase and amplitude mismatch, respectively. The beamforming chip and the phase shifters are fabricated in SiGe BiCMOS technology. The 2 bit and 3 bit phase shifters draws 7 mA and 10 mA respectively from a 3.3 V supply. The circuits are well suited for highly integrated beamforming millimeter-wave transceivers.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; array signal processing; millimetre wave integrated circuits; millimetre wave phase shifters; BiCMOS circuits; RF phase shifter; SiGe; beamforming chip; channel beamforming network; current 10 mA; current 7 mA; frequency 55 GHz to 67 GHz; millimeter wave beamforming; millimeter wave transceivers; power distribution network; voltage 3.3 V; word length 2 bit; word length 3 bit; Array signal processing; BiCMOS integrated circuits; Phase measurement; Phase shifters; Radio frequency; Semiconductor device measurement; Silicon germanium; RF phase shifter; beamforming; mm-wave; phased array;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667918