DocumentCode
1644351
Title
Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method
Author
Kim, M.R. ; Lee, S.D. ; Lee, J.S. ; Kwak, N.S. ; Kim, S.D. ; Rhee, J.K.
Author_Institution
Millimeter-wave INnovation Technol. Res. Center, Dongguk Univ., Seoul
fYear
2008
Firstpage
21
Lastpage
24
Abstract
We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epi-layers were reduced.
Keywords
Gunn diodes; III-V semiconductors; indium compounds; isolation technology; millimetre wave diodes; semiconductor epitaxial layers; Gunn diodes; InP; epilayer crack reduction; fabrication technology; frequency 94 GHz; stress reduction; trench method; Cathodes; Diodes; Fabrication; Frequency; Gallium arsenide; Gold; Gunn devices; Indium phosphide; Millimeter wave technology; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-1885-5
Electronic_ISBN
978-1-4244-1886-2
Type
conf
DOI
10.1109/GSMM.2008.4534546
Filename
4534546
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