Title :
Sleep transistor forward body bias: An Extra Knob to lower ground bouncing noise in MTCMOS circuits
Author :
Jiao, Hailong ; Kursun, Volkan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A new forward body bias technique is proposed in this paper to minimize the ground bouncing noise with smaller sleep transistors in MTCMOS circuits. The new forward body bias technique lowers the peak ground bouncing noise by up to 15.43% while reducing the size of the additional sleep transistors by up to 52.38% as compared to the previously published noise-aware MTCMOS techniques with standard zero-body-biased sleep transistors in a 90 nm CMOS technology. The design tradeoffs between the ground bouncing noise and the leakage power consumption in body-biased MTCMOS circuits are evaluated.
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit noise; MTCMOS circuits; dominant noise component; ground bouncing noise; leakage power consumption; optimum transistor size; size 90 nm; sleep transistor forward body bias; Active circuits; Active noise reduction; CMOS technology; Circuit noise; Energy consumption; Integrated circuit noise; Noise reduction; Sleep; Subthreshold current; Threshold voltage; SLEEP to ACTIVE mode transition; dominant noise component; forward body bias; leakage power consumption; optimum transistor size;
Conference_Titel :
SoC Design Conference (ISOCC), 2009 International
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5034-3
Electronic_ISBN :
978-1-4244-5035-0
DOI :
10.1109/SOCDC.2009.5423813
