Title :
High performance 0.15 /spl mu/m self-aligned SiGe p-MOS-MODFET´s with SiN gate dielectric
Author :
Lu, W. ; Hammond, R. ; Koester, S.J. ; Wang, X.W. ; Chu, J.O. ; Ma, T.P. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Using jet-vapor-deposited silicon nitride as gate dielectric, self-aligned p-type SiGe metal-oxide-semiconductor modulated-doped field effect transistors are fabricated. For a 0.15 /spl mu/m gate-length device, the gate leakage current is as low as 0.46 nA//spl mu/m at V/sub gs/=3 V and V/sub ds/=-50 mV. A maximum extrinsic transconductance of 305 mS/mm, a unity current gain cut-off frequency of 62 GHz, and a maximum oscillation frequency of 68 GHz are measured at low operating biases of V/sub ds/=-0.75 V and V/sub gs/=0.4 V.
Keywords :
Ge-Si alloys; MOSFET; dielectric thin films; high electron mobility transistors; leakage currents; microwave field effect transistors; semiconductor device measurement; semiconductor materials; silicon compounds; vapour deposited coatings; -0.75 V; -50 mV; 0.15 mum; 0.4 V; 3 V; 305 mS/mm; 62 GHz; 68 GHz; DC characteristics; MOS modulated-doped field effect transistors; RF characteristics; Si/sub 0.2/Ge/sub 0.8/-Si/sub 0.7/Ge/sub 0.3/; SiGe-SiN; SiN gate dielectric; UHV-CVD grown heterostructures; gate leakage current; gate-length; jet-vapor-deposited SiN; low operating bias; maximum extrinsic transconductance; maximum oscillation frequency; self-aligned SiGe p-MOS-MODFET; unity current gain cut-off frequency; Current measurement; Cutoff frequency; Dielectrics; FETs; Frequency measurement; Gain measurement; Germanium silicon alloys; Leakage current; Silicon germanium; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824220
