Nonlinear validation of arbitrary load X-parameter and measurement-based device models

Author

Gunyan, Daniel ; Horn, Joachim ; Xu, Jianjun ; Root, David E.

Author_Institution

Agilent Technol., Santa Rosa, CA, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

X-parameters are the mathematically correct supersets of S-parameters valid for nonlinear (and linear) components under large-signal (and small-signal) conditions. This paper compares a PHD model generated from arbitrary load-dependent measured X-parameters and a measurement-based non-quasi-static device model and validates them against tuned-load measurements. CW, IMD, and ACPR swept-power measurements are compared. The models agree on the simulated device behavior and compare well to validation measurements.

Keywords

S-parameters; Schottky gate field effect transistors; microwave field effect transistors; semiconductor device models; PHD model; S-parameters; arbitrary load X-parameter; large-signal condition; measurement-based device models; measurement-based nonquasi-static device model; nonlinear components; nonlinear validation; small-signal condition; tuned-load measurements; Circuit simulation; Data mining; Impedance; MESFETs; Multiaccess communication; Power measurement; Predictive models; Solid modeling; Spectral analysis; Tuners;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Measurement Conference, 2009 73rd ARFTG

Conference_Location

Boston, MA

Print_ISBN

978-1-4244-3442-8

Electronic_ISBN

978-1-4244-3443-5

Type

conf

DOI

10.1109/ARFTG.2009.5278063

Filename

5278063