Title :
Nonlinear validation of arbitrary load X-parameter and measurement-based device models
Author :
Gunyan, Daniel ; Horn, Joachim ; Xu, Jianjun ; Root, David E.
Author_Institution :
Agilent Technol., Santa Rosa, CA, USA
Abstract :
X-parameters are the mathematically correct supersets of S-parameters valid for nonlinear (and linear) components under large-signal (and small-signal) conditions. This paper compares a PHD model generated from arbitrary load-dependent measured X-parameters and a measurement-based non-quasi-static device model and validates them against tuned-load measurements. CW, IMD, and ACPR swept-power measurements are compared. The models agree on the simulated device behavior and compare well to validation measurements.
Keywords :
S-parameters; Schottky gate field effect transistors; microwave field effect transistors; semiconductor device models; PHD model; S-parameters; arbitrary load X-parameter; large-signal condition; measurement-based device models; measurement-based nonquasi-static device model; nonlinear components; nonlinear validation; small-signal condition; tuned-load measurements; Circuit simulation; Data mining; Impedance; MESFETs; Multiaccess communication; Power measurement; Predictive models; Solid modeling; Spectral analysis; Tuners;
Conference_Titel :
Microwave Measurement Conference, 2009 73rd ARFTG
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3442-8
Electronic_ISBN :
978-1-4244-3443-5
DOI :
10.1109/ARFTG.2009.5278063
