Title :
Multiple-color GaAs/AlGaAs superlattice infrared photodetector controlled by the polarity and magnitude of the bias voltage
Author :
Hsu, M.C. ; Kaun, C.H. ; Wang, S.Y. ; Lee, C.P.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We present a voltage-controlled multi-color infrared photodetector consisting of two stacks of GaAs/AlGaAs superlattices with main absorption peaks at 10.7 /spl mu/m and 6.7 /spl mu/m respectively. The switching in response wavelengths is achieved by using the opposite polarity dependence of responsivity in each stack. Compared with traditional voltage-controlled designs, the detector achieves better switching in response colors and lower operating bias voltage.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical switches; gallium arsenide; infrared detectors; infrared spectra; semiconductor superlattices; 10.7 mum; 6.7 mum; GaAs-AlGaAs; GaAs/AlGaAs superlattices; absorption peaks; absorption spectra; bias voltage magnitude; bias voltage polarity; multiple-color GaAs/AlGaAs superlattice infrared photodetector; operating bias voltage; polarity dependence; response wavelength switching; responsivity; voltage-controlled multi-color infrared photodetector; Electromagnetic wave absorption; Energy barrier; Gallium arsenide; Infrared detectors; Photoconductivity; Photodetectors; Stark effect; Substrates; Superlattices; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824223
