Applying the calibration comparison technique for verification of transmission line standards on silicon up to 110 GHz

Author

Rumiantsev, Andrej ; Corson, Phillip L. ; Sweeney, Susan L. ; Arz, Uwe

Author_Institution

SUSS MicroTec Test Syst. GmbH, Sacka, Germany

fYear

2009

Firstpage

1

Lastpage

6

Abstract

This paper will present the results of extracting the electrical characteristics of planar lines using the calibration comparison method for standards realized in IBM´s advanced 0.13 mum CMOS process. For the first time, this method is applied to characterizing the customized standards on silicon up to 110 GHz. Additionally, this paper considers the influences of the reference benchmark calibration standards, included with GaAs reference material RM8130, on the characterization accuracy of silicon wafer-embedded lines at mm-wave frequencies.

Keywords

CMOS analogue integrated circuits; III-V semiconductors; calibration; field effect MIMIC; gallium arsenide; microwave measurement; transmission lines; GaAs; IBM advanced CMOS process; calibration comparison; electrical characteristics; embedded lines; mm-wave frequency; planar lines; reference material RM8130; silicon wafer; size 0.13 mum; transmission line standards; CMOS process; Calibration; Electric variables; Frequency measurement; Impedance; NIST; Probes; Silicon; Testing; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Measurement Conference, 2009 73rd ARFTG

Conference_Location

Boston, MA

Print_ISBN

978-1-4244-3442-8

Electronic_ISBN

978-1-4244-3443-5

Type

conf

DOI

10.1109/ARFTG.2009.5278064

Filename

5278064