DocumentCode :
1644495
Title :
Applying the calibration comparison technique for verification of transmission line standards on silicon up to 110 GHz
Author :
Rumiantsev, Andrej ; Corson, Phillip L. ; Sweeney, Susan L. ; Arz, Uwe
Author_Institution :
SUSS MicroTec Test Syst. GmbH, Sacka, Germany
fYear :
2009
Firstpage :
1
Lastpage :
6
Abstract :
This paper will present the results of extracting the electrical characteristics of planar lines using the calibration comparison method for standards realized in IBM´s advanced 0.13 mum CMOS process. For the first time, this method is applied to characterizing the customized standards on silicon up to 110 GHz. Additionally, this paper considers the influences of the reference benchmark calibration standards, included with GaAs reference material RM8130, on the characterization accuracy of silicon wafer-embedded lines at mm-wave frequencies.
Keywords :
CMOS analogue integrated circuits; III-V semiconductors; calibration; field effect MIMIC; gallium arsenide; microwave measurement; transmission lines; GaAs; IBM advanced CMOS process; calibration comparison; electrical characteristics; embedded lines; mm-wave frequency; planar lines; reference material RM8130; silicon wafer; size 0.13 mum; transmission line standards; CMOS process; Calibration; Electric variables; Frequency measurement; Impedance; NIST; Probes; Silicon; Testing; Transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurement Conference, 2009 73rd ARFTG
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3442-8
Electronic_ISBN :
978-1-4244-3443-5
Type :
conf
DOI :
10.1109/ARFTG.2009.5278064
Filename :
5278064
Link To Document :
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