Mid-IR type-II interband cascade lasers based on InAs/GaInSb heterostructures

Author

Bradshaw, J.L. ; Bruno, J.D. ; Pham, J.T. ; Wortman, D.E. ; Yang, R.Q.

Author_Institution

US Army Res. Lab., Adelphi, MD, USA

fYear

1999

Firstpage

598

Lastpage

599

Abstract

In this work, we present recent results demonstrating interband cascade lasers (ICLs) at wavelengths near 4 microns. Three different MBE growths, on different vendor substrates, have led to ICL devices with good structural quality and good laser performance. For example, we observed peak output powers exceeding 4 W/facet at 80 K, pulsed operation up to 217 K cw operation at 70 K, and differential quantum efficiencies exceeding 450%.

Keywords

III-V semiconductors; current density; gallium compounds; heat sinks; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 3.9 mum; 70 to 217 K; InAs-GaInSb; InAs/GaInSb heterostructures; MBE growth; cw operation; differential quantum efficiency; heat sinking; laser performance; mid-IR type-II interband cascade lasers; peak output power; pulsed operation; structural quality; type II quantum well structures; Chemical lasers; Laser modes; Laser radar; Power generation; Quantum cascade lasers; Semiconductor lasers; Substrates; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824225

Filename

824225