High power handling low-voltage RF MEMS switched capacitors

A new topology of high power handling RF MEMS switched capacitor is presented in this paper. The design has been optimized in order to get low sensitivity to mechanic stress and temperature while keeping a low pull-down voltage (17 V). Two MEMS switched capacitors have been fabricated in back-to-back configuration and results in a C_up=92 fF and C_down=260 fF. The IP₁ and the hold down power of the device have been measured at 3 GHz and are respectively 2.8 and 3.3 W. A 2 bit array with higher capacitance values (270-610 fF) is also fabricated. Reliability measurements are presented and show a pull-in voltage variation of 5 V after 3.75 hours hold in the downstate position.