Title :
High power solid-state DRO with power booster
Author :
Tiefeng Shi ; Kaldi Li
Author_Institution :
NMSG, Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
A 2.446GHz high power dielectric resonator oscillator (DRO) is presented, which can generate 330W CW output power at room temperature with -98dBc/Hz at 1kHz offset, -112.6dBc/Hz at 10kHz offset, and -132dBc/Hz at 1MHz offset, with a drain efficiency of 45% by using two Freescale LDMOS transistors. In contrast, the single-device LDMOS DRO without power boost can deliver 138W CW power with -111.2dBc/Hz at 10 kHz offset and 41% drain efficiency.
Keywords :
dielectric resonator oscillators; microwave oscillators; Freescale LDMOS transistor; drain efficiency; efficiency 45 percent; frequency 1 MHz; frequency 1 kHz; frequency 10 kHz; frequency 2.446 GHz; high power dielectric resonator oscillator; high power solid-state DRO; power 138 W; power 330 W; power booster; single-device LDMOS DRO; temperature 293 K to 298 K; Microwave circuits; Microwave oscillators; Performance evaluation; Phase noise; Power amplifiers; Power generation; DRO; High Power; Power Boost;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
