Title :
Application of on-wafer calibration techniques for advanced high-speed BiCMOS technology
Author :
Rumiantsev, A. ; Sakalas, P. ; Pourchon, F. ; Chevalier, P. ; Derrier, N. ; Schroter, M.
Author_Institution :
Cascade Microtech Dresden GmbH, Sacka, Germany
Abstract :
On-wafer RF calibration methods are compared to the conventional Impedance Standard Substrate (ISS) calibration combined with a dummies de-embedding approach for transistors of an advanced BiCMOS process. We discuss the design of customized calibration standards addressing specifics of the silicon BiCMOS process. Our results show that on-wafer calibration methods are the most suitable approaches for accurate characterization of sub-THz SiGe HBT´s.
Keywords :
electric breakdown; heterojunction bipolar transistors; silicon-on-insulator; DC current gain; bipolar transistors; breakdown characteristics; breakdown voltage; temperature dependence; temperature interaction; Calibration; Frequency measurement; Impedance; Impedance measurement; Microwave measurements; Silicon; Transistors; BiCMOS process technology; RF circuits; S-parameters; Silicon-germanium HBT; calibration;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667929
