DocumentCode
1644689
Title
Base resistance distribution in bipolar transistors: Relevance to compact noise modeling and extraction from admittance parameters
Author
Vitale, Francesco ; Pijper, Ralf ; Van der Toorn, Ramses
Author_Institution
Delft Inst. of Microsyst. & Nanoelectron. (Dimes), Delft Univ. of Technol., Delft, Netherlands
fYear
2010
Firstpage
161
Lastpage
164
Abstract
We discuss the relevance of the distribution of the base resistance of planar bipolar transistors with respect to noise-and small-signal characteristics. We present analytical results for admittance parameters in terms of elements of the small-signal equivalent circuit of the Mextram compact model and discuss extraction of base resistance distribution parameters from measured admittance parameters for selected cases.
Keywords
bipolar transistors; equivalent circuits; semiconductor device models; Mextram compact model; admittance parameters; base resistance distribution parameters extraction; bipolar transistors; compact noise modeling; small-signal equivalent circuit; Admittance; Current measurement; Electrical resistance measurement; Frequency measurement; Integrated circuit modeling; Noise; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location
Austin, TX
ISSN
1088-9299
Print_ISBN
978-1-4244-8578-9
Type
conf
DOI
10.1109/BIPOL.2010.5667931
Filename
5667931
Link To Document