• DocumentCode
    1644762
  • Title

    The thermal gain effect in GaAs-based HBT´s

  • Author

    Curtice, W.R. ; Hietala, V.M. ; Gebara, E. ; Laskar, J.

  • Author_Institution
    W. R. Curtice Consulting, Washington Crossing, PA, USA
  • Volume
    2
  • fYear
    2003
  • Firstpage
    639
  • Abstract
    The existence of increased, low frequency gain in GaAs HBT amplifiers is shown to be due to temperature modulation by the input signal. Device data is presented and the effect is reproduced using an electrothermal HBT model. The effect may be important in many broadband, bipolar device applications.
  • Keywords
    III-V semiconductors; bipolar transistor circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; wideband amplifiers; GaAs; GaAs HBT amplifier; broadband bipolar device; electrothermal model; temperature modulation; thermal gain; Broadband amplifiers; Circuit simulation; Distortion; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Signal design; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2003 IEEE MTT-S International
  • Conference_Location
    Philadelphia, PA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-7695-1
  • Type

    conf

  • DOI
    10.1109/MWSYM.2003.1212454
  • Filename
    1212454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1644762