Title :
The thermal gain effect in GaAs-based HBT´s
Author :
Curtice, W.R. ; Hietala, V.M. ; Gebara, E. ; Laskar, J.
Author_Institution :
W. R. Curtice Consulting, Washington Crossing, PA, USA
Abstract :
The existence of increased, low frequency gain in GaAs HBT amplifiers is shown to be due to temperature modulation by the input signal. Device data is presented and the effect is reproduced using an electrothermal HBT model. The effect may be important in many broadband, bipolar device applications.
Keywords :
III-V semiconductors; bipolar transistor circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; wideband amplifiers; GaAs; GaAs HBT amplifier; broadband bipolar device; electrothermal model; temperature modulation; thermal gain; Broadband amplifiers; Circuit simulation; Distortion; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Signal design; Temperature; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212454
