Title :
CMOS large signal model for CAD
Author :
Angelov, I. ; Fernhdal, M. ; Ingvarson, F. ; Zirath, H. ; Vickes, H.O.
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A compact large-signal model for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter power spectrum measurements and load pull measurements. Very good correspondences between measurements on 100 nm CMOS FETs (f/sub T/ = 140 GHz, f/sub max/ =100 GHz) and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.
Keywords :
CMOS integrated circuits; MOSFET; UHF field effect transistors; capacitance; circuit CAD; equivalent circuits; integrated circuit modelling; microwave field effect transistors; radiofrequency integrated circuits; semiconductor device models; 100 GHz; 100 nm; 140 GHz; CAD application; CMOS large signal model; RF circuits; S-parameter power spectrum measurements; compact model; load pull measurements; model convergence behavior; model equations; model parameters; nonlinear circuit simulation; Circuit simulation; Convergence; FETs; Frequency measurement; Nonlinear circuits; Nonlinear equations; Power measurement; Radio frequency; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212455
