Integrated Si-LDMOS transistors for 11 GHz X-Band power amplifier applications

Author

Sorge, R. ; Fischer, A. ; Mai, A. ; Schley, P. ; Schmidt, J. ; Wipf, Ch ; Pliquett, R. ; Barth, R.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2010

Firstpage

90

Lastpage

93

Abstract

The integration of RF NLDMOS transistors into a 0.13 μm CMOS process for operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB gain and 0.25 W/mm power density and 22% power added efficiency at 1 dB output power compression is presented. The self aligned NLDMOS was modularly integrated into IHP´s 130 nm SiGeC BiCMOS platform targeting 1 W X-Band power amplifiers for radar and satellite communication applications.

Keywords

BiCMOS integrated circuits; power amplifiers; satellite communication; semiconductor device manufacture; RF NLDMOS transistors; frequency 11 GHz; gain 11 dB; integrated Si-LDMOS transistors; output power compression; power added efficiency; power density; satellite communication; x-band power amplifier applications; BiCMOS integrated circuits; CMOS integrated circuits; Gain; Logic gates; Power amplifiers; Radio frequency; Transistors; BiCMOS integrated circuits; MOSFET power amplifier; power amplifier; semiconductor device fabrication;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE

Conference_Location

Austin, TX

ISSN

1088-9299

Print_ISBN

978-1-4244-8578-9

Type

conf

DOI

10.1109/BIPOL.2010.5667935

Filename

5667935