Title :
Implementation of NQS effects in large-signal BJT models
Author :
Cherepko, S.V. ; Hwang, J.C.M.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
Large-signal implementation of non-quasistatic (NQS) effects in bipolar transistors is reviewed. An approach strategy is proposed that allows bilateral translation between small- and large-signal equivalent circuits. The approach is illustrated by translating simple small-signal equations commonly used in BJT modeling, as well as more complicated ones proposed in the literature. The present approach extends the state of art by considering arbitrary bias dependence of small-signal time constants.
Keywords :
bipolar transistors; equivalent circuits; semiconductor device models; NQS effects; arbitrary bias dependence; bilateral translation; bipolar transistor; large-signal BJT models; large-signal equivalent circuits; nonquasi-static effects; small-signal equivalent circuits; small-signal time constants; Art; Bipolar transistors; Capacitors; Cutoff frequency; Data mining; Delay effects; Equations; Equivalent circuits; Signal analysis; Steady-state;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212456
