Title :
Optimized halo structure for 80 nm physical gate CMOS technology with indium and antimony highly angled ion implantation
Author :
Miyashita, K. ; Yoshimura, H. ; Takayanagi, M. ; Fujiwara, M. ; Adachi, K. ; Nakayama, T. ; Toyoshima, Y.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Application of heavy ions of antimony and indium to the halo structure of 80 nm physical gate CMOS is optimized theoretically and experimentally. For pMOSFETs, highly angled antimony ion implantation is found to be effective in controlling the short channel effect (SCE) with high drive current and low junction leakage current. In contrast, for nMOSFETs, the highly angled indium halo is not necessarily effective in controlling SCE.
Keywords :
CMOS integrated circuits; MOSFET; antimony; indium; ion implantation; leakage currents; semiconductor device models; semiconductor process modelling; 80 nm; 80 nm physical gate CMOS technology; Si:In; Si:Sb; device simulation; halo implantation conditions optimization; heavy ion implantation; high drive current; highly angled ion implantation; low activation efficiency; low junction leakage current; nMOSFET; optimized halo structure; pMOSFET; short channel effect control; transient enhanced diffusion; CMOS technology; CMOSFETs; Electronic mail; Implants; Indium; Ion implantation; Laboratories; Leakage current; MOSFET circuits; Microelectronics;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824235
