Title :
A 5-GHz monolithic silicon bipolar down-converter with on-chip image filtering
Author :
Ragonese, Egidio ; Italia, Alessandro ; Palmisano, Giuseppe
Author_Institution :
Facolta di Ingegneria, Univ. di Catania, Italy
Abstract :
A monolithic 5-GHz down-converter, which consists of a two-stage low noise amplifier (LNA) and a double-balanced mixer, was designed using a 46-GHz-fT silicon bipolar process. The proposed down-converter exhibits a power gain as high as 21 dB, a 4.7-dB SSB noise figure and an input compression point of -21 dBm. Moreover, an on-chip image rejection ratio (IRR) higher than 70 dB is achieved by making use of passive LC notch filters. The circuit was assembled in a 5×5 mm2 low-cost QFN 24-lead plastic package and draws only 23 mA from a 3-V power supply.
Keywords :
bipolar integrated circuits; integrated circuit design; microwave frequency convertors; mixers (circuits); notch filters; packaging; radiofrequency amplifiers; silicon; 21 dB; 23 mA; 3 V; 4.7 dB; 5 GHz; QFN plastic package; SSB noise figure; Si; circuit assembling; double-balanced mixer; input compression point; low noise amplifier; monolithic down-converter; on-chip image filtering; on-chip image rejection ratio; passive LC notch filters; power gain; silicon bipolar process; Amplitude modulation; Assembly; Circuits; Filtering; Image coding; Low-noise amplifiers; Noise figure; Passive filters; Plastics; Silicon;
Conference_Titel :
Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean
Print_ISBN :
0-7803-8271-4
DOI :
10.1109/MELCON.2004.1346797
