Title :
Effect of <100> channel direction for high performance SCE immune pMOSFET with less than 0.15 /spl mu/m gate length
Author :
Sayama, H. ; Nishida, Y. ; Oda, H. ; Oishi, T. ; Shimizu, S. ; Kunikiyo, T. ; Sonoda, K. ; Inoue, Y. ; Inuishi, M.
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A high performance CMOSFET with a channel along the <100> crystallographic axis has been developed. Current drivability of the pMOSFET is improved by about 15% by changing the channel direction from <110> to <100> due to an increase in hole mobility and high immunity against short channel effects (SCE). As a result, a drive current of 810 /spl mu/A//spl mu/m for nMOS and of 420 /spl mu/A//spl mu/m for pMOS with 0.14 /spl mu/m gate length has been achieved under 1 nA//spl mu/m off current at 1.8 V operation.
Keywords :
CMOS integrated circuits; MOSFET; hole mobility; semiconductor device measurement; 0.14 mum; 1.8 V; <100> channel direction; current drivability; drive current; gate length; high performance CMOSFET; hole mobility; nMOS; off current; pMOSFET; short channel effect immunity; Anisotropic magnetoresistance; CMOS technology; CMOSFETs; Crystallography; Electron mobility; FETs; Intrusion detection; MOSFET circuits; Telephony; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824238
