Title :
A 6-30 GHz Compact 3-bit Digital Attenuator MMIC using InP/InGaAs PIN Diodes
Author :
Eom, Hyunchul ; Han, Sejun ; Yang, Kyounghoon
Author_Institution :
Division of Electrical Engineering, School of Electrical Engineering and Computer Science (EECS), Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-Dong, Yuseong-Gu, Daejeon, Republic of Korea
Abstract :
A broadband (6-30 GHz) 3-bit digital attenuator MMIC using InP/InGaAs PIN Diodes has been proposed and fabricated. The proposed digital attenuator is composed of Pi- resistive networks for non-reflective step attenuation and fabricated by using a benzocyclobutene(BCB)-based multi-layer MMIC technology. By using the InP/InGaAs PIN diodes having a high cutoff frequency for digital switching, the proposed digital attenuator has shown the low insertion loss and excellent return loss characteristics. The 3-bit digital attenuator has a 3 dB attenuation step and a 21 dB attenuation range. The minimum insertion loss is 4 dB and the input/output return loss is greater than 10 dB over all attenuation states and frequencies. The chip size is 1.47times0.99 mm2.
Keywords :
III-V semiconductors; MMIC; attenuators; gallium arsenide; gallium compounds; indium compounds; p-i-n diodes; InP-InGaAs; PIN diodes; benzocyclobutene; broadband digital attenuator; digital switching; frequency 6 GHz to 30 GHz; multilayer MMIC technology; nonreflective step attenuation; resistive networks; word length 3 bit; Attenuation; Attenuators; Circuits; Cutoff frequency; Diodes; Indium gallium arsenide; Indium phosphide; Insertion loss; MMICs; Voltage control;
Conference_Titel :
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1885-5
Electronic_ISBN :
978-1-4244-1886-2
DOI :
10.1109/GSMM.2008.4534569
