Modeling the effect of acceptor-type traps on internal electric field of a GaN-pin device phenomenon

The performance of a pin structure diode fabricated on epitaxial layer on a GaN template using re-growth p-type GaN technology by PAMBE. Experimental results show that relatively forward turn-on voltage and on-resistance are 3.1V and 5mΩ-cm², respectively. Due to the metal-semiconductor interface has the lower p-ohmic contact. On the contrary, the breakdown voltage of the device operating greater than 800V is observed. Furthermore, the pin structure diode within acceptor-type traps using a two-dimensional simulator as GaN bulk within threading dislocations (about ~10⁸cm^-2) was compared to including the electric field different from x and y position. It leads to substantially higher electric field as function of x position between the metal and the p-type GaN when drift layer is not fully depleted.