Author :
Chevalier, P. ; Gloria, D. ; Scheer, P. ; Pruvost, S. ; Gianesello, F. ; Pourchon, F. ; Garcia, P. ; Vildeuil, J.-C. ; Chantre, A. ; Gamier, C. ; Noblanc, O. ; Voinigescu, S.P. ; Dickson, T.O. ; Laskin, E. ; Nicolson, S.T. ; Chalvatzis, T. ; Yau, K.H.K.
Abstract :
This paper presents the status of most advanced CMOS and BiCMOS technologies able to address very high-speed optical communications and millimeter-wave applications. The performance of active and passive devices available on bulk Si and high-resistivity SOI is reviewed and HF characteristics of state-of-the-art SiGe HBTs and MOSFETs are compared. The performance of building blocks designed in different CMOS and BiCMOS platforms are also presented. Finally, we conclude on the suitability of different Si technologies to address such high-frequency applications
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; MOSFET; heterojunction bipolar transistors; integrated optoelectronics; millimetre wave integrated circuits; silicon-on-insulator; BiCMOS platforms; CMOS platforms; MOSFET; SiGe; active devices; bulk Si; heterojunction bipolar transistor; high-resistivity silicon-on-insulator; millimeter-wave applications; millimeter-wave integrated circuits; optical integrated circuits; passive devices; very high-speed optical communications; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; High speed optical techniques; Integrated circuit technology; Integrated optics; Millimeter wave integrated circuits; Millimeter wave technology; Optical fiber communication; Silicon germanium; BiCMOS; CMOS; millimeter-wave circuits; optical communication;
