Title :
Ultra low DC power consumption In-P HITFET based differential oscillator
Author :
Camprini, M. ; Cidronali, A. ; Magrini, I. ; Collodi, G. ; Costanzo, L. ; Manes, G.
Author_Institution :
Dept. of Electron. & Commun., Florence Univ., Firenze, Italy
Abstract :
The monolithic integration of tunneling diodes (TDs) with other conventional semiconductor devices gives the opportunity to design ultra-low DC power consumption circuits by taking advantage of the intrinsic negative differential resistance (NDR) of TDs. In this paper, we present the design of a differential oscillator based on InP-HEMT/TD technology. The circuit is based on a couple of phase-locked 5.8 GHz VCOs. Each VCO draws a current of 1.1mA at 500mV and generates an output power of -9.0 dBm on a 50Ω load.
Keywords :
HEMT integrated circuits; III-V semiconductors; circuit simulation; indium compounds; integrated circuit design; low-power electronics; tunnel diodes; voltage-controlled oscillators; 1.1 mA; 50 ohm; 500 mV; In-P HITFET; InP; InP-HEMT-TD; differential oscillator; monolithic integration; negative differential resistance; phase-locked VCOs; semiconductor devices; tunneling diodes; ultra low DC power consumption; Energy consumption; HEMTs; Integrated circuit technology; Microwave devices; Monolithic integrated circuits; Oscillators; Power generation; Semiconductor devices; Semiconductor diodes; Tunneling;
Conference_Titel :
Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean
Print_ISBN :
0-7803-8271-4
DOI :
10.1109/MELCON.2004.1346800
