DocumentCode :
1644955
Title :
Mainstream memory technologies in deep submicron
Author :
Natarajan, Sreedhar ; Alvandpour, Atila
Author_Institution :
Linkoping Univ., Sweden
Volume :
1
fYear :
2004
Firstpage :
175
Abstract :
Ideal characteristics of any universal memory technology should be to meet the performance of a SRAM, density as in DRAM and nonvolatility (like Flash). Flash memories have been dominant in the nonvolatile race based on relatively standard silicon design processes. Memory dominance on SoCs continues to increase and hence tomorrow´s high-quality SoCs require high quality memory today. The emerging mainstream memory technology should be (1) a universal memory, (2) a process solution, and (3) suitable for the SoC market. This paper will discuss a few emerging memory technologies that are being researched today by Natarajan (2003).
Keywords :
integrated memory circuits; random-access storage; DRAM; SRAM; SoCs; deep submicron; flash memories; high quality memory; mainstream memory technology; nonvolatility; silicon design process; universal memory technology; CMOS technology; Costs; Electric resistance; Flash memory; Magnetic materials; Nonvolatile memory; Production; Random access memory; Silicon; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean
Print_ISBN :
0-7803-8271-4
Type :
conf
DOI :
10.1109/MELCON.2004.1346801
Filename :
1346801
Link To Document :
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