Title :
Noise modeling of advanced technology high speed SiGe HBTs
Author :
Sakalas, P. ; Herricht, J. ; Ramonas, M. ; Schroter, M.
Author_Institution :
CEDIC, Dresden Univ. of Technol., Dresden, Germany
Abstract :
Noise parameters of SiGe HBTs fabricated in different technologies were measured in the 1-26 GHz frequency range. The standard dc, ac characteristics and noise parameters were compared to the compact model HICUM. Very good agreement was obtained for all technologies. The noise parameters were simulated with a new systematic noise correlation model, implemented and realized in HICUM via Verilog-A. The model was verified up to 500 GHz against TCAD simulations and Boltzman Transport equation solution method. The compact realization of the new noise correlation model is applicable to all SPICE-like circuit simulators.
Keywords :
Ge-Si alloys; SPICE; UHF bipolar transistors; hardware description languages; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; semiconductor device noise; SPICE-like circuit simulators; SiGe; Verilog-A; ac characteristics; compact model HICUM; dc characteristics; frequency 1 GHz to 26 GHz; high speed SiGe HBT; noise correlation; noise parameters; Correlation; Heterojunction bipolar transistors; High definition video; Integrated circuit modeling; Noise; Silicon germanium; Solid modeling; HICUM; Noise; SiGe Heterojunction bipolar transistor; correlation; noise modeling; shot noise;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667943
