• DocumentCode
    1645033
  • Title

    Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz

  • Author

    Shyh-Chiang Shen ; Feng, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • fYear
    1999
  • Firstpage
    689
  • Lastpage
    692
  • Abstract
    A novel low-voltage radio-frequency microelectromechanical system (RF MEMS) switch is reported. The device switching voltages are 14-17 volts. When the device is operated in an ´on´ state, an insertion loss of less than 0.5 dB with a return loss of -15 dB at 40 GHz was measured. When operated in its ´off´ state, an isolation of better than 27 dB over the frequency band from 0.25 GHz to 40 GHz was achieved. The RF MEMS switch equivalent circuit model shows that the ´on´ resistance is 0.3 /spl Omega/ and the ´off´ capacitance is 90 fF, which results in a figure of merit of 6000 GHz.
  • Keywords
    MMIC; UHF integrated circuits; equivalent circuits; losses; low-power electronics; microactuators; microwave switches; semiconductor switches; -15 dB; 0.25 to 40 GHz; 0.3 ohm; 14 to 17 V; 90 fF; RF MEMS switches; actuation voltage; device switching voltages; equivalent circuit model; figure of merit; insertion loss; low-voltage switches; radio-frequency microelectromechanical system; return loss; signal frequencies; Electrical resistance measurement; Insertion loss; Loss measurement; Low voltage; Microelectromechanical systems; RF signals; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.824245
  • Filename
    824245