• DocumentCode
    1645071
  • Title

    High-current test-bench for thyristor-based semiconductors

  • Author

    Voss, Johannes ; Sarregui, Garrikoitz ; Rossbach, Fabian ; De Doncker, Rik W. ; Ubillos, Ander

  • Author_Institution
    PGS - Inst. for Power Generation & Storage Syst., RWTH Aachen Univ., Aachen, Germany
  • fYear
    2015
  • Firstpage
    1122
  • Lastpage
    1129
  • Abstract
    Increasingly thyristor-based converters (e.g. FACTS) are being integrated in the grids, to stabilize the distribution and transmission grids, due to the high power handling-capability of these semiconductor devices. Nevertheless, during faults, these converters need to withstand high circulating currents without failing. To investigate these scenarios, this paper presents a test bench to simulate different failure modes in a controlled environment. This test bench is able to generate symmetrical and asymmetrical sinusoidal currents up to 20 kA with a maximum duration of two seconds. Directly after the high current event, the voltage blocking capability of the thyristor is tested, by measuring the leakage current of the device under test under high voltage conditions (DUT).
  • Keywords
    failure analysis; leakage currents; semiconductor device testing; thyristor convertors; FACTS; circulating current; device under test; failure mode; high-current test-bench; leakage current; power handling-capability; semiconductor device; sinusoidal current; thyristor converter; thyristor-based semiconductor; transmission grid; voltage blocking capability; Current measurement; Insulated gate bipolar transistors; Junctions; Supercapacitors; Switching frequency; Thyristors; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International Conference on
  • Conference_Location
    Sydney, NSW
  • Type

    conf

  • DOI
    10.1109/PEDS.2015.7203583
  • Filename
    7203583